Life time evaluation of MOSFET in ULSIs using photon emission method

Author

Tsutsu, N. ; Uraoka, Y. ; Morii, T. ; Tsuji, K.

Author_Institution

Matsushita Electric Ind. Co. Ltd., Osaka, Japan

fYear

1992

fDate

16-19 Mar 1992

Firstpage

94

Lastpage

99

Abstract

A method of estimating the lifetime of a MOSFET at the LSI chip level by using the photon emission is proposed. The relation between the photon count and the lifetime under AC stress was studied. The method is based on the theory that the lifetime of hot carrier degradation is described by a universal curve with respect to the photon count at 200-nm wavelength. A quantitative estimation of lifetime was demonstrated. As an example of the application of this method, the lifetime of a CMOS microprocessor was estimated

Keywords

CMOS integrated circuits; VLSI; hot carriers; insulated gate field effect transistors; photoemission; 200 nm; AC stress; CMOS microprocessor; LSI chip level; MOSFET; ULSIs; hot carrier degradation; lifetime; photon count; photon emission method; Degradation; Hot carriers; Large scale integration; Life estimation; Life testing; MOSFET circuits; Optical microscopy; Stress; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0535-3

Type

conf

DOI

10.1109/ICMTS.1992.185946

Filename

185946