Title :
Life time evaluation of MOSFET in ULSIs using photon emission method
Author :
Tsutsu, N. ; Uraoka, Y. ; Morii, T. ; Tsuji, K.
Author_Institution :
Matsushita Electric Ind. Co. Ltd., Osaka, Japan
Abstract :
A method of estimating the lifetime of a MOSFET at the LSI chip level by using the photon emission is proposed. The relation between the photon count and the lifetime under AC stress was studied. The method is based on the theory that the lifetime of hot carrier degradation is described by a universal curve with respect to the photon count at 200-nm wavelength. A quantitative estimation of lifetime was demonstrated. As an example of the application of this method, the lifetime of a CMOS microprocessor was estimated
Keywords :
CMOS integrated circuits; VLSI; hot carriers; insulated gate field effect transistors; photoemission; 200 nm; AC stress; CMOS microprocessor; LSI chip level; MOSFET; ULSIs; hot carrier degradation; lifetime; photon count; photon emission method; Degradation; Hot carriers; Large scale integration; Life estimation; Life testing; MOSFET circuits; Optical microscopy; Stress; Ultra large scale integration; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0535-3
DOI :
10.1109/ICMTS.1992.185946
