Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect

Describes test transistors with different emitter-base breakdown voltages and an experimental analysis to predict hot-carrier degradation, including the stress field effect, in advanced high-speed self-aligned bipolar transistors. Test transistors were fabricated with different links of extrinsic to intrinsic bases, that is, transistors had different reverse I-V characteristics of the emitter-base junction. Experimental evidence showed that the dependence of the excess base current on stress can be expressed using emitter perimeter, reverse stress voltage, stress-enhancing voltage, and stress charge