Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs

Author

Talmat, R. ; Achour, H. ; Cretu, B. ; Routoure, J.-M. ; Benfdila, A. ; Carin, R. ; Collaert, N. ; Mercha, A. ; Simoen, E. ; Claeys, C.

Author_Institution

GREYC, Univ. of Caen, Juin, France

fYear

2011

fDate

12-16 June 2011

Firstpage

131

Lastpage

134

Abstract

This paper aims at the studying the low frequency noise from 100 K up to room temperature in n- and p-channel triple-gate FinFET transistors with 25 nm fin-width, 65 nm fin-height, a high-k dielectric / metal gate stack, strained and unstrained substrates. These investigations allow evaluating the quality of the gate oxide interface, to identify defects in the silicon film and to make a correlation between the observed defects and some technological steps.

Keywords

MOSFET; elemental semiconductors; high-k dielectric thin films; semiconductor device noise; silicon; silicon-on-insulator; Si; gate oxide interface; high-k dielectric-metal gate stack; low frequency noise; n-channel triple-gate FinFET transistor; p-channel triple-gate FinFET transistor; silicon film defect; size 25 nm; size 65 nm; strained FinFET; temperature dependence assessment; unstrained FinFET; Carbon; FinFETs; Logic gates; Low-frequency noise; Mathematical model; Temperature measurement; FinFET; Lorentzian; SOI; low-frequency noise; strain; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994281

Filename

5994281