DocumentCode :
2899557
Title :
EEPROM-based Charging-Effects Sensors for Plasma Etching and Ion Implantation
Author :
Lutkaszek, W.
Author_Institution :
Center for Integrated Systems, Stanford University
fYear :
1992
fDate :
25-28 Oct. 1992
Firstpage :
101
Lastpage :
105
Keywords :
EPROM; Etching; Implants; Ion implantation; Monitoring; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Sensor phenomena and characterization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wafer Level Reliability Workshop, 1992. Final Report., 1992 International
Conference_Location :
Lake Tahoe, CA, USA
Type :
conf
DOI :
10.1109/IWLR.1992.657991
Filename :
657991
Link To Document :
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