Carrier transport test structure for characterization of poly/monosilicon interfaces

Author

Hu, Bailin ; Berger, Horst H. ; Gauckler, Andreas ; Muller, Bernt

Author_Institution

Inst. of Microelectron., Tech. Univ., Berlin, Germany

fYear

1992

fDate

16-19 Mar 1992

Firstpage

121

Lastpage

124

Abstract

A combination of diode and inverse transistor test devices with a common basic geometry has been used to investigate the minority carrier transport through the p-monosilicon/p+-polysilicon sandwich. A method to separate the combined influence of the interface and polysilicon from that of the underlying monosilicon is presented. The device structures, the measurements, and the current separation methods are described. The most striking result is a clear dependence of the minority carrier transport properties of the interface on the doping of the underlying monosilicon

Keywords

bipolar transistors; carrier mobility; doping profiles; minority carriers; semiconductor diodes; carrier transport test structure; current separation methods; device structures; doping; inverse transistor test devices; minority carrier transport; p-monosilicon/p+-polysilicon sandwich; Contracts; Current measurement; Density measurement; Diodes; Doping; Geometry; Length measurement; MONOS devices; Microelectronics; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0535-3

Type

conf

DOI

10.1109/ICMTS.1992.185952

Filename

185952