Development of copper-copper bonding by ultrasonic welding for IGBT modules

Author

Kido, Kazumasa ; Momose, Fumihiko ; Nishimura, Yoshitaka ; Goto, Tomoaki

Author_Institution

Semicond. Group, Fuji Electr. Syst. Co., Ltd., Nagano, Japan

fYear

2010

fDate

Nov. 30 2010-Dec. 2 2010

Firstpage

1

Lastpage

5

Abstract

In this paper, we present the copper-copper bonding technique by ultrasonic welding for the copper terminals of large current, high reliability IGBT modules. Investigated topics are joint strength indicated from joint microstructure, the effect of copper hardness on joint strength, the relationship between terminal bonding location and the damage to the insulator layer in the module structure, and reliability estimation of large IGBT modules with ultrasonic welding comparing with conventional soldering.

Keywords

copper; insulated gate bipolar transistors; lead bonding; modules; semiconductor device metallisation; semiconductor device reliability; ultrasonic welding; Cu-Cu; IGBT modules; copper-copper bonding; high reliability IGBT module; insulator layer damage; joint microstructure; joint strength; module structure; reliability estimation; ultrasonic welding; Acoustics; Bonding; Copper; Insulated gate bipolar transistors; Joints; Stress; Welding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium (IEMT), 2010 34th IEEE/CPMT International

Conference_Location

Melaka

ISSN

1089-8190

Print_ISBN

978-1-4244-8825-4

Type

conf

DOI

10.1109/IEMT.2010.5746751

Filename

5746751