Title :
The flicker noise in amorphous silicon based temperature sensors in flexible substrates
Author :
Ahmed, Moinuddin ; Butler, Donald P. ; Celik-Butler, Zeynep
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA
Abstract :
This paper presents the flicker noise or 1/f-noise measurement of RF sputtered amorphous silicon temperature sensors. The temperature sensor was fabricated between a polyimide substrate and superstrate to place it on a zero stress plane. The effects of flicker noise and voltage dependence of noise voltage power spectral density of the sensor were evaluated. The average value of flicker noise coefficient or normalized Hooge parameter K1/f was found to be 1.2×10-11.
Keywords :
1/f noise; amorphous semiconductors; electric noise measurement; elemental semiconductors; flicker noise; silicon; sputter deposition; temperature sensors; 1/f-noise measurement; RF sputtered amorphous silicon temperature sensor; Si; flexible substrate; flicker noise coefficient; noise voltage power spectral density; normalized Hooge parameter; polyimide substrate; superstrate; 1f noise; Amorphous silicon; Temperature measurement; Temperature sensors; Voltage measurement; Flexible substrate; flicker noise; temperature coefficient of resistance; temperature sensor;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994287
