The flicker noise in amorphous silicon based temperature sensors in flexible substrates

Author

Ahmed, Moinuddin ; Butler, Donald P. ; Celik-Butler, Zeynep

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA

fYear

2011

fDate

12-16 June 2011

Firstpage

154

Lastpage

157

Abstract

This paper presents the flicker noise or 1/f-noise measurement of RF sputtered amorphous silicon temperature sensors. The temperature sensor was fabricated between a polyimide substrate and superstrate to place it on a zero stress plane. The effects of flicker noise and voltage dependence of noise voltage power spectral density of the sensor were evaluated. The average value of flicker noise coefficient or normalized Hooge parameter K_1/f was found to be 1.2×10^-11.

Keywords

1/f noise; amorphous semiconductors; electric noise measurement; elemental semiconductors; flicker noise; silicon; sputter deposition; temperature sensors; 1/f-noise measurement; RF sputtered amorphous silicon temperature sensor; Si; flexible substrate; flicker noise coefficient; noise voltage power spectral density; normalized Hooge parameter; polyimide substrate; superstrate; 1f noise; Amorphous silicon; Temperature measurement; Temperature sensors; Voltage measurement; Flexible substrate; flicker noise; temperature coefficient of resistance; temperature sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994287

Filename

5994287