DocumentCode
2899628
Title
Frozen noise origin of temporal low-frequency noise in electronic devices
Author
Marinov, Ognian ; Deen, M. Jamal
Author_Institution
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada
fYear
2011
fDate
12-16 June 2011
Firstpage
158
Lastpage
161
Abstract
In this work, we show that the 1/f noise can originate from temporal accumulation of structural variance in electronic devices. We compare results of our calculations to published data and we critically discuss the advantages and limitations relevant to the use of the spatial variations for explanation of the low-frequency noise in MOS transistors.
Keywords
1/f noise; MOSFET; semiconductor device noise; 1/f noise; MOS transistor; electronic devices; frozen noise; structural variance; temporal low-frequency noise; Germanium; Low-frequency noise; MOSFETs; Rough surfaces; Silicon; Surface roughness; LFN; spatial variance and temporal low-frequency noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location
Toronto, ON
Print_ISBN
978-1-4577-0189-4
Type
conf
DOI
10.1109/ICNF.2011.5994288
Filename
5994288
Link To Document