DocumentCode :
2899639
Title :
Ultra low CTE (0 PPM/C) polyimide film and its potential application
Author :
Tsukada, Yutaka
Author_Institution :
Ritsumeikan Univ., Kyoto, Japan
fYear :
2010
fDate :
Nov. 30 2010-Dec. 2 2010
Firstpage :
1
Lastpage :
1
Abstract :
A CTE gap between a silicon chip and a package substrate is one of the most critical issues in securing reliability for a high-density packaging. We succeeded in a development of a new thermally stable and ultra low CTE polyimide film . The CTE is lower than that of silicon in a wide temperature range. A thick laminate sheet, with the thickness of 250 to 500 micrometers, composed with this ultra low CTE polyimide films shows low CTE as well. Since the sheet can be easily processed by machine cutting or laser drilling with a high aspect ratio, it is highly expected to perform as a core material for a thermally-reliable package substrate. Along with the role of core material, this polyimide film is able to be applied as a dielectric material for wiring layers as well. This paper describes possible applications of this film in a package substrate with early test data of thermal cycle stress.
Keywords :
dielectric materials; electronics packaging; polymer films; reliability; sheet materials; thermal stresses; core material; dielectric material; high aspect ratio; high-density packaging; laser drilling; machine cutting; reliability; silicon chip; size 250 mum to 500 mum; thermal cycle stress; thermally- eliable package substrate; thick laminate sheet; ultra low CTE polyimide film; wiring layers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium (IEMT), 2010 34th IEEE/CPMT International
Conference_Location :
Melaka
ISSN :
1089-8190
Print_ISBN :
978-1-4244-8825-4
Type :
conf
DOI :
10.1109/IEMT.2010.5746756
Filename :
5746756
Link To Document :
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