DocumentCode
2899685
Title
Noise and Terahertz rectification in semiconductor diodes and transistors
Author
Mateos, J. ; Iñiguez-de-la-Torre, I. ; González, T.
Author_Institution
Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
fYear
2011
fDate
12-16 June 2011
Firstpage
16
Lastpage
21
Abstract
In this work we explore high frequency collective phenomena present in classic HEMTs and in asymmetric nanodiodes, so called self-switching diodes (SSDs), that leads to a peak in the current noise spectrum which enhances the DC response of the devices, thus originating a THz resonance in the rectification of AC signals. These mechanisms have been evidenced in recent experiments made with HEMTs, in which THz detection as a result of plasma wave resonances has been demonstrated. In this paper, the noise spectra of the devices have been obtained by means of Monte Carlo simulations self-consistently coupled to a Poisson solver, able to provide not only static results but also the effect of collective phenomena such as plasma oscillations.
Keywords
Monte Carlo methods; high electron mobility transistors; plasma oscillations; plasma waves; semiconductor device noise; semiconductor diodes; stochastic processes; HEMT; Monte Carlo simulation; Poisson solver; SSD; THz detection; THz resonance; current noise spectrum; high electron mobility transistor; nanodiode; noise rectification; plasma oscillation; plasma wave resonance; self-switching diode; semiconductor diode; terahertz rectification; HEMTs; Indium gallium arsenide; Logic gates; MODFETs; Noise; Plasmas; Resonant frequency; Monte Carlo simulation; THz detection; plasma oscillations;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location
Toronto, ON
Print_ISBN
978-1-4577-0189-4
Type
conf
DOI
10.1109/ICNF.2011.5994291
Filename
5994291
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