Defects influenced by the Jahn-Teller effect as the sources of flicker noise in GaAs based devices

In order to determine the origin of 1/f noise in devices made on the basis of GaAs the model of bistable defects is developed. The origin and the structure of multistable point defects (bistable in the simplest case) in GaAs are researched. It is suggested that the mechanism of spatial and charge multistability of the defects could be linked with the influence of the Jahn-Teller effect. The DX center and the complex of defects containing the vacancy V_Ga are analyzed as an example of multistable defects. The carried out research demonstrates that one of the possible sources of the 1/f noise in GaAs based devices could be defects subjected to the Jahn-Teller effect.