DocumentCode
2899729
Title
CMOS Inductor Performance Estimation using Z- and S-parameters
Author
Drakaki, Maria ; Hatzopoulos, Alkis A. ; Siskos, Stylianos
Author_Institution
Dept. of Electron., Educational Inst. of Thessaloniki
fYear
2007
fDate
27-30 May 2007
Firstpage
2256
Lastpage
2259
Abstract
A comparison is made between model parameter calculation equations of RF CMOS inductors. Model parameters can be extracted from different equations using as variables either Y-, Z-parameters depending on the circuit configuration of the inductor or S-parameters. Results are based on on-wafer RF S-parameter measurements of a fabricated inductor. Differences appear between results obtained with calculation equations based on Z- and S-parameters, extracted for a differentially driven inductor. Therefore, care must be taken by the designers when evaluating an integrated inductor performance to comprehend the technological and operating environment of the device and to choose the corresponding formulas accordingly.
Keywords
S-parameters; equivalent circuits; inductors; CMOS inductor performance estimation; RF CMOS inductors; S-parameters; Z-parameters; CMOS technology; Differential equations; Electrical resistance measurement; Inductors; Integrated circuit measurements; Parameter extraction; Q factor; Radio frequency; Scattering parameters; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378732
Filename
4253123
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