DocumentCode
2899760
Title
Non-aligned arrays of zinc oxide nanowires: fabrication and field emission properties
Author
Zhang, Gengmin ; Chen, Liang ; Zhang, Qifeng
Author_Institution
Dept. of Electron., Peking Univ., Beijing, China
fYear
2004
fDate
6-10 Sept. 2004
Firstpage
120
Lastpage
122
Abstract
In the search for a good field emitter to be used in future field emission displays (FEDs), we have fabricated arrays of zinc oxide nanowires (ZnO NWs) on silicon wafers by the method of thermal evaporation and then measured their field emission performance. When the fabrication conditions were properly controlled, randomly oriented ZnO NWs directly grew on the Si substrate and uniform field emission was attained from the whole sample surface.
Keywords
elemental semiconductors; field emission displays; nanowires; silicon; zinc compounds; ZnO; field emission displays; field emission performance; field emission properties; field emitter; nonaligned arrays; silicon wafers; thermal evaporation; zinc oxide nanowires; Anodes; Argon; Boats; Fabrication; Nanowires; Powders; Scanning electron microscopy; Silicon; Temperature sensors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN
0-7803-8437-7
Type
conf
DOI
10.1109/IVESC.2004.1414157
Filename
1414157
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