Title :
Noise and diffusion of hot carriers in semiconductor materials and devices
Author :
Nougier, J.P. ; Varani, L.
Author_Institution :
IES, Univ. Montpellier 2, Montpellier, France
Abstract :
Hot carrier transport and noise get an increasing importance due to down scaling dimensions of microelectronic devices. A survey is given of the significant evolution and progress made during the last 40 years in this domain. A focus is made on diffusion noise : definition of the noise sources, experimental determination, microscopic modeling, noise in devices.
Keywords :
diffusion; hot carriers; noise; semiconductor devices; semiconductor materials; diffusion; hot carrier transport; microelectronic devices; noise; semiconductor devices; semiconductor materials; Distribution functions; Electric fields; Fluctuations; Impedance; Mathematical model; Noise; Scattering; devices; diffusion; fluctuations; hot carriers; impedance field; noise; noise temperature; semiconductors;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994299
