Title :
The theory, practice and application of thermal resistance measurements of IGBT devices
Author :
Yen, Charles Low Khai
Author_Institution :
Infineon Technol., Batu Berendam, Malaysia
fDate :
Nov. 30 2010-Dec. 2 2010
Abstract :
This paper will act as a definitive guide on how the Junction to Case thermal resistance (RthJC) of an IGBT device is measured. This paper would provide an overview of the measurement circuit and the methods used in the measurement of an IGBT device housed in the T0247 package. We shall discuss the theory and formulas used to derive the thermal resistance of the device using the measured data. paper will also review the improvements of RthJC values in Package Development projects, new die bonding techniques and package conversion projects.
Keywords :
insulated gate bipolar transistors; thermal management (packaging); IGBT devices; T0247 package; die bonding techniques; junction to case thermal resistance; measurement circuit; package conversion projects; package development projects; thermal resistance measurement; Capacitance; Electrical resistance measurement; Heat sinks; Junctions; Temperature measurement; Thermal resistance;
Conference_Titel :
Electronic Manufacturing Technology Symposium (IEMT), 2010 34th IEEE/CPMT International
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-8825-4
DOI :
10.1109/IEMT.2010.5746765
