Title :
Measurement and parameter extraction of submicron VLSI MOSFET test structures
Author :
Wen, C.S. ; Guldahl, M. ; Sadwick, L.P. ; Kent, R. ; Gaffur, H.
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
Abstract :
Presents new algorithms for the extraction of VLSI MOSFET parameters. The new method, EMPEROR (enhanced MOSFET parameter extraction with regression optimization routines), consists of two major components: (1) the extraction of the threshold voltage and the transconductance gain; and (2) the extraction of MOSFET parameters, including the effective channel length, the drain and source resistance, and the mobility degradation coefficient. Both components are based on the mobility degradation model, which is described. EMPEROR has shown considerable strength in MOSFET parameter extraction, including submicron devices. In many cases of practical interest and use, standard extraction methods failed to produce consistent and realistic results, while EMPEROR was able to provide more accurate values
Keywords :
MOS integrated circuits; VLSI; insulated gate field effect transistors; integrated circuit testing; semiconductor process modelling; EMPEROR; effective channel length; extraction methods; mobility degradation coefficient; mobility degradation model; parameter extraction; regression optimization routines; source resistance; submicron VLSI MOSFET test structures; threshold voltage; transconductance gain; Data mining; Degradation; Equations; MOSFET circuits; Parameter extraction; Standards development; Testing; Threshold voltage; Transconductance; Very large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0535-3
DOI :
10.1109/ICMTS.1992.185969
