DocumentCode
2899847
Title
Advanced modeling of oxide defects for random telegraph noise
Author
Goes, W. ; Schanovsky, F. ; Grasser, T. ; Reisinger, H. ; Kaczer, B.
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2011
fDate
12-16 June 2011
Firstpage
204
Lastpage
207
Abstract
The results from a recently developed measurement technique, called time-dependent defect spectroscopy (TDDS), have shed new light on reliability issues, such as random telegraph noise (RTN) and the negative bias instability (NBTI). It has been found that established models fail to explain these findings. A refined charge trapping model is suggested by assuming additional metastable defect configurations. Thereby, we can give an explanation for the new TDDS findings while remaining consistent with results obtained from conventional RTN analysis.
Keywords
MOSFET; random noise; semiconductor device reliability; MOSFET; metastable defect configurations; negative bias instability; oxide defects; random telegraph noise; refined charge trapping model; reliability issues; time-dependent defect spectroscopy; Charge transfer; Logic gates; Noise; Potential energy; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location
Toronto, ON
Print_ISBN
978-1-4577-0189-4
Type
conf
DOI
10.1109/ICNF.2011.5994301
Filename
5994301
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