• DocumentCode
    2899847
  • Title

    Advanced modeling of oxide defects for random telegraph noise

  • Author

    Goes, W. ; Schanovsky, F. ; Grasser, T. ; Reisinger, H. ; Kaczer, B.

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2011
  • fDate
    12-16 June 2011
  • Firstpage
    204
  • Lastpage
    207
  • Abstract
    The results from a recently developed measurement technique, called time-dependent defect spectroscopy (TDDS), have shed new light on reliability issues, such as random telegraph noise (RTN) and the negative bias instability (NBTI). It has been found that established models fail to explain these findings. A refined charge trapping model is suggested by assuming additional metastable defect configurations. Thereby, we can give an explanation for the new TDDS findings while remaining consistent with results obtained from conventional RTN analysis.
  • Keywords
    MOSFET; random noise; semiconductor device reliability; MOSFET; metastable defect configurations; negative bias instability; oxide defects; random telegraph noise; refined charge trapping model; reliability issues; time-dependent defect spectroscopy; Charge transfer; Logic gates; Noise; Potential energy; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2011 21st International Conference on
  • Conference_Location
    Toronto, ON
  • Print_ISBN
    978-1-4577-0189-4
  • Type

    conf

  • DOI
    10.1109/ICNF.2011.5994301
  • Filename
    5994301