Random telegraph signal noise in CMOS active pixel sensors

Author

Deen, M. Jamal ; Majumder, Sumit ; Marinov, Ognian ; El-Desouki, Munir M.

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada

fYear

2011

fDate

12-16 June 2011

Firstpage

208

Lastpage

211

Abstract

We discuss the source of random telegraph signal (RTS) behavior in photodiodes, metal-oxide-semiconductor (MOS) transistors and active pixel sensors (APS). First, a detailed review on the magnitude and the time constants of RTS noise observed in state-of-the art small-pitch imagers will be presented. Second, the impact of RTS noise on the quality of the images obtained from MOS imagers will be discussed, with a focus on the noise requirements for biomedical imaging applications. Finally, our experimental results will be discussed and some ideas on how to deal with RTS noise in silicon imagers will be described based on the RTS noise analyses.

Keywords

CMOS image sensors; MOSFET; biomedical imaging; elemental semiconductors; photodiodes; semiconductor device noise; silicon; CMOS active pixel sensors; MOS imagers; MOS transistors; RTS noise analyses; Si; biomedical imaging applications; metal-oxide-semiconductor transistors; photodiodes; random telegraph signal behavior; small-pitch imagers; Active pixel sensors; Art; Biomedical imaging; Noise; Photodiodes; Silicon; Transistors; CMOS imagers; RTS; Random telegraph signal noise; silicon photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994302

Filename

5994302