Suppression of measurement errors in effective-MOSFET-channel-length extraction

Author

Terada, Kazuo

Author_Institution

NEC Corp., Sagamihara, Japan

fYear

1992

fDate

16-19 Mar 1992

Firstpage

208

Lastpage

212

Abstract

The effects of measurement errors in effective-MOSFET-channel-length extraction are estimated, both numerically and experimentally. In the numerical estimation, the errors in the least-squares method, which was used twice in the extraction, are calculated for several reference MOSFET combinations. In the experimental estimation, the errors in the extracted channel lengths were estimated, changing the reference MOSFET combinations. It is found, from these estimations, that choosing both short- and long-channel MOSFETs as reference MOSFETs is effective in suppressing measurement errors

Keywords

insulated gate field effect transistors; least squares approximations; length measurement; measurement errors; effective-MOSFET-channel-length extraction; least-squares method; long-channel MOSFETs; measurement errors; numerical estimation; reference MOSFET combinations; short-channel MOSFETs; Electrical resistance measurement; Estimation error; Laboratories; Least squares methods; Length measurement; Linearity; MOSFET circuits; Measurement errors; Microelectronics; National electric code;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0535-3

Type

conf

DOI

10.1109/ICMTS.1992.185971

Filename

185971