DocumentCode
2899889
Title
High-frequency voltage noise of nanometric Schottky-barrier diodes and heterostructure barrier varactor in cyclostationary conditions
Author
Mahi, Fatima Zohra ; Varani, Luca ; Shiktorov, P. ; Starikov, E. ; Gruzhinskis, V.
Author_Institution
Phys. of Semicond. Devices Lab., Univ. of Bechar, Bechar, Algeria
fYear
2011
fDate
12-16 June 2011
Firstpage
216
Lastpage
219
Abstract
In this contribution we propose an analytical approach for the calculation of the high-frequency noise spectrum of frequency multipliers based on n+n-metal Schottky-barrier diodes and n+n - barrier - nn+ Heterostructure-barrier varactors. The model includes a diodes operating in series with a parallel resonant circuit to extract the harmonics generated in the terahertz frequency region.
Keywords
Schottky diodes; computational complexity; frequency multipliers; semiconductor device noise; varactors; cyclostationary conditions; frequency multipliers; heterostructure barrier varactor; high-frequency noise spectrum; high-frequency voltage noise; nanometric Schottky-barrier diodes; parallel resonant circuit; terahertz frequency region; Harmonic analysis; Mathematical model; Noise; RLC circuits; Resonant frequency; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location
Toronto, ON
Print_ISBN
978-1-4577-0189-4
Type
conf
DOI
10.1109/ICNF.2011.5994304
Filename
5994304
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