Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs

Author

Manouchehri, F. ; Valizadeh, P. ; Kabir, M.Z.

Author_Institution

Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, QC, Canada

fYear

2011

fDate

12-16 June 2011

Firstpage

220

Lastpage

222

Abstract

This work presents a theoretical study on the 1/f low frequency noise (LFN) based on the fluctuations in the number of carriers in the two-dimensional electron gas (2DEG) channel of AlGaN/GaN self-aligned HFETs. This study validates the role of thermally activated trap levels on 1/f LFN characteristics. Simulation results confirm that the low frequency noise behavior follows characteristic of 1/f^γ with frequency exponent β between 0 and 2. At room temperature the simulation results are compared with the experiments. The effect of temperature is also studied on the noise behavior. It is found that the frequency exponent can vary with temperature.

Keywords

1/f noise; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 1-f low frequency noise; AlGaN-GaN; HFET; drain noise-current modeling; frequency exponent; temperature 293 K to 298 K; thermally activated trap levels; two-dimensional electron gas channel; Aluminum gallium nitride; Fluctuations; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; 1/ƒ noise; AlGaN/GaN; HFET; low frequency noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994305

Filename

5994305