Low frequency noise of CdTe single crystals under light illumination

Author

Andreev, A. ; Grmela, L. ; Sik, O. ; Elhadidy, H. ; Sikula, J.

Author_Institution

Inst. of Phys., Brno Univ. of Technol., Brno, Czech Republic

fYear

2011

fDate

12-16 June 2011

Firstpage

227

Lastpage

229

Abstract

Noise spectroscopy of CdTe radiation detector has been carried out. When the sample is illuminated, 1/f noise is generated in the bulk as well as on the surface as a result of charge carrier interactions and also of radiation fluctuations. Conditions for the light absorption to take place on the surface only can be adjusted by properly selecting the wavelength. When the sample is illuminated by the light with the photon energy lower than the band gap energy noise is generated in sample volume and GR noise can be observed. For illumination by light with energy higher than the band gap energy light is observed on the surface and then we have measured 1/f noise only. In this case the corresponding sources are located on the surface.

Keywords

1/f noise; II-VI semiconductors; cadmium compounds; energy gap; lighting; particle detectors; semiconductor counters; wide band gap semiconductors; CdTe; band gap energy; charge carrier interactions; light absorption; light illumination; noise spectroscopy; photon energy; radiation detector; radiation fluctuations; Lighting; Noise; Noise measurement; Photonic band gap; Photonics; Spectroscopy; Temperature measurement; CdTe radiation detectors; low frequency noise; noise spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994307

Filename

5994307