Title :
A 2.5 dB low noise 6 to 18 GHz HEMT MMIC amplifier
Author :
Panelli, J. ; Chiang, N. ; Ou, W. ; Chan, R. ; Shih, C. ; Pao, Y.C. ; Archer, J.
Author_Institution :
Litton Solid State Div., Santa Clara, CA, USA
Abstract :
A two-stage, 6-18-GHz, 15.0-dB-gain monolithic GaAs high-electron-mobility-transistor (HEMT) low-noise amplifier (LNA) was designed, fabricated, and tested. A typical noise figure of 2.5 dB and output power of 5 dBm were measured. This MMIC amplifier exhibited excellent performance at a DC power consumption of 2 V and 20 mA. This performance was achieved using a production 0.25- mu m standard HEMT technology without mushroom gates. Low DC power consumption, a low noise figure, and high gain make this device well suited for front-end receiver applications.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; 0.25 micron; 15 dB; 2 V; 2.5 dB; 20 mA; 6 to 18 GHz; DC power consumption; GaAs; HEMT MMIC amplifier; front-end receiver applications; monolithic HEMT LNA; noise figure; output power; Energy consumption; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; Noise figure; Power amplifiers; Power generation; Power measurement; Testing;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.185987
