A new power amplifier topology with series biasing and power combining of transistors

Author

Shifrin, M. ; Ayasli, Y. ; Katzin, P.

Author_Institution

Hittite Microwave Corp., Woburn, MA, USA

fYear

1992

fDate

1-3 June 1992

Firstpage

39

Lastpage

41

Abstract

A power amplifier topology was demonstrated in a microwave monolithic integrated circuit (MMIC) implementation with GaAs MESFETs. This topology overcomes several limitations of the traditional approach of paralleling of power transistor unit cells. In the new topology, unit cells are both parallel and series combined. The benefits include higher input and output impedances, broadband power matched interstage networks, and high voltage biasing at reduced DC current. Measured results on a MMIC and a hybrid power amplifier implemented with this technique are presented.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; network topology; power amplifiers; 12 to 13 dB; 3.7 to 5 GHz; GaAs; GaAs MESFETs; MMIC; broadband power matched interstage networks; high voltage biasing; hybrid power amplifier; input impedance; output impedances; power amplifier topology; power combining of transistors; series biasing; small signal gain; Circuit topology; Gallium arsenide; Impedance; MESFETs; MMICs; Microwave amplifiers; Monolithic integrated circuits; Network topology; Power amplifiers; Power transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.185992

Filename

185992