Discussion on the possibility of diffusive transport in mesoscopic conductors

Author

Marconcini, P. ; Totaro, M. ; Macucci, M.

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy

fYear

2011

fDate

12-16 June 2011

Firstpage

250

Lastpage

253

Abstract

We numerically investigate the conductance and the Fano factor in mesoscopic conductors, obtained by modulation doping in GaAs/AlGaAs heterostructures containing randomly located scatterers. In our simulations we represent these scatterers, deriving from the presence of randomly located impurities and dopants, either with hard-wall obstacles or with realistic potential fluctuations. Our results show that in mesoscopic devices it is quite unlikely to reach the diffusive regime, mainly due to the insufficient number of propagating modes.

Keywords

III-V semiconductors; aluminium compounds; diffusion; electric admittance; electrical conductivity; electron spin polarisation; fluctuations; gallium arsenide; mesoscopic systems; semiconductor doping; wide band gap semiconductors; Fano factor; GaAs-AlGaAs; conductance; diffusive transport; dopants; doping; heterostructures; impurities; mesoscopic conductors; potential fluctuations; Conductors; Electric potential; Gallium arsenide; Green´s function methods; Impurities; Neodymium; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994314

Filename

5994314