Title :
Highly producible monolithic Q-band MESFET VCO
Author :
Martin, S. ; Meyer, S. ; Reese, E. ; Salzman, K.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
The authors describe a highly integrated fully monolithic Q-band voltage-controlled oscillator (VCO) that was built on a uniformly doped epitaxially grown substrate using 0.35- mu m gates. This FET-based oscillator delivered greater than 90 mW of output power at a frequency of 40 GHz with 2.8 GHz of tuning bandwidth. Tuning was achieved via an integrated varactor. A four-stage buffer amplifier and all bias networks have been included on chip to minimize performance variation due to assembly tolerances and load variations.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave oscillators; tuning; variable-frequency oscillators; 0.35 micron; 2.8 GHz; 40 GHz; 90 mW; FET-based oscillator; GaAs; bias networks; four-stage buffer amplifier; integrated varactor; monolithic Q-band MESFET VCO; output power; semiinsulating GaAs substrate; tuning bandwidth; uniformly doped epitaxially grown substrate; voltage-controlled oscillator; Assembly; Bandwidth; Frequency; Network-on-a-chip; Power amplifiers; Power generation; Substrates; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.185997
