A 94 GHz monolithic downconverter in a MESFET technology

Author

Dieudonne, J.-M. ; Rittmeyer, R. ; Adelseck, B. ; Colquhoun, A.

Author_Institution

Telefunken System Technik, Ulm, Germany

fYear

1992

fDate

1-3 June 1992

Firstpage

69

Lastpage

72

Abstract

A fully monolithic GaAs-94 GHz downconverter consisting of a single balanced diode mixer and a two-stage IF amplifier has been fabricated in a MESFET technology on a single chip. A conversion gain of 14.5 dB combined with a double-sideband noise figure of 6.5 dB has been achieved at 94 GHz. The reported results have been obtained in a one-pass design and show the validity of the design method, using technology based Schottky diode equivalent circuit and harmonic balanced analysis, and they also prove the maturity of the technology for millimeter-wave applications.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; gallium arsenide; 14.5 dB; 6.5 dB; 94 GHz; GaAs; GaAs substrate; MESFET technology; Schottky diode equivalent circuit; balanced diode mixer; conversion gain; double-sideband noise figure; harmonic balanced analysis; millimeter-wave applications; monolithic downconverter; one-pass design; two-stage IF amplifier; Contact resistance; Equivalent circuits; Frequency conversion; Gain; Gallium arsenide; MESFETs; Millimeter wave circuits; Millimeter wave technology; Noise figure; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.186000

Filename

186000