Accurately measured two-port low frequency noise and correlation of GaAs based HBTs

Author

Sevimli, Oya ; Parker, Anthony E. ; Fattorini, Anthony P. ; Harvey, James T.

Author_Institution

Electron. Eng., Macquarie Univ., Sydney, NSW, Australia

fYear

2011

fDate

12-16 June 2011

Firstpage

275

Lastpage

278

Abstract

Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the data linearly, using noise correlation matrices. Noise shapes and correlation coefficients of HBTs from separate test pieces and of two emitters sizes were compared to reveal possible aging effects. Simulated 1/f noise with a simple non-linear transistor model was used to verify the accuracy of the method.

Keywords

1/f noise; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; matrix algebra; semiconductor device noise; 1/f noise; GaAs; HBT; heterojunction bipolar transistors; noise correlation matrices; noise shapes; nonlinear transistor model; two-port low frequency noise; Correlation; Frequency measurement; Heterojunction bipolar transistors; Noise; Noise measurement; Resistors; Voltage measurement; GaAs HBT; Low frequency noise; noise correlation matrix;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994320

Filename

5994320