DocumentCode
2900212
Title
A millimeter-wave monolithic matrix distributed amplifier
Author
Simon, K.M. ; Chu, S.L.G. ; Wolhert, R. ; Schindler, M.J. ; Cole, J.B.
Author_Institution
Raytheon Co., Lexington, MA, USA
fYear
1992
fDate
1-3 June 1992
Firstpage
73
Lastpage
75
Abstract
A millimeter-wave monolithic two-stage matrix distributed amplifier with greater than 11-dB gain from 16 to 38 GHz has been demonstrated. The two-stage matrix amplifier described here extends the matrix amplifier to millimeter-wave frequencies. The matrix amplifier topology yields a compact circuit with higher gain per unit area than a conventional distributed amplifier.<>
Keywords
MMIC; field effect integrated circuits; microwave amplifiers; 11 dB; 16 to 38 GHz; amplifier FET bias scheme; gain per unit area; matrix amplifier topology; millimeter-wave monolithic matrix distributed amplifier; semiinsulating GaAs substrate; two-stage matrix amplifier; Circuit topology; Dielectric measurements; Distributed amplifiers; Inductors; Microwave FETs; Microwave amplifiers; Millimeter wave circuits; Radio frequency; Radiofrequency amplifiers; Transmission line matrix methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location
Albuquerque, NM, USA
Print_ISBN
0-7803-0677-5
Type
conf
DOI
10.1109/MCS.1992.186001
Filename
186001
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