DocumentCode :
2900241
Title :
Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors
Author :
Pascal, F. ; Raoult, J. ; Sagnes, B. ; Hoffmann, A. ; Haendler, S. ; Morin, G.
Author_Institution :
IES, Univ. Montpellier II, Montpellier, France
fYear :
2011
fDate :
12-16 June 2011
Firstpage :
279
Lastpage :
282
Abstract :
In this study, we present recent low frequency noise results obtained on Si/SiGe:C Heterojunction Bipolar Transistors (HBTs) associated with a 0.13 μm BiCMOS technology. The HBTs are supplied by STMicroelectronics Crolles and present unity current gain frequencies (fT) and maximum oscillation frequencies (fmax) in the 250s of GHz. The 1/f noise sources are found to be located in the intrinsic emitter-base (E-B) region. The 1/f noise figure of merit, KB, is found to be close to 1.5 10-10 μm2. This excellent result is at least one decade better than the initial development of this 0.13 μm BiCMOS technology. Moreover, in order to take into account the improvement of the high frequency parameters (fT and fmax) associated to this technological evolution, we have studied the ratio fC/fT, figure of merit that links LF Noise and transistor speed. We have analyzed the 1/f noise improvement from different technological aspects related to the emitter-base process, for instance the surface cleaning (prior to the polysilicon deposition) and the epitaxial regrowth of the polysilicon.
Keywords :
1/f noise; BiCMOS integrated circuits; Ge-Si alloys; carbon; elemental semiconductors; epitaxial growth; heterojunction bipolar transistors; oscillations; silicon; surface cleaning; 1/f noise improvement; BiCMOS heterojunction bipolar transistor; STMicroelectronics Crolles; Si-SiGe:C; epitaxial regrowth; frequency parameter; gain frequency; intrinsic E-B region; intrinsic emitter-base region; low frequency noise; oscillation frequency; size 0.13 mum; surface cleaning; BiCMOS integrated circuits; Current measurement; Frequency measurement; Heterojunction bipolar transistors; Noise; Semiconductor device measurement; BiCMOS; Heterojunction Bipolar Transistor (HBT); SiGe:C; low-frequency noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
Type :
conf
DOI :
10.1109/ICNF.2011.5994321
Filename :
5994321
Link To Document :
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