Title :
Extremely low power transmitter/receiver GaAs MMIC circuits at L band
Author :
Platzker, A. ; Cole, J.B. ; Davis, S. ; Goldfarb, M. ; Tabatabaie-Alavi, K. ; Wendler, J.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
The authors have developed an enhancement GaAs monolithic microwave integrated circuit (MMIC) process which is capable of producing very-low-power, highly efficient transmitting/receiving circuits which can be operated from unipolar 3-V batteries. They have demonstrated key circuits such as a surface acoustic wave (SAW) locked oscillator, a variable-gain 180 degrees phase shifter, and a variable-gain power amplifier. The amplifier required a DC current of 4 mA and delivered 4 dBm to 50- Omega loads with greater than 25 dB of gain. The process is capable of producing high-gain devices with low knee voltages of less than 1 V which pinch-off at 0 V. The very low substrate losses and current leaks associated with the process allow design of RF circuits in high-impedance environments.<>
Keywords :
III-V semiconductors; MMIC; crystal resonators; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave oscillators; phase shifters; power amplifiers; surface acoustic wave devices; 1 V; 25 dB; 4 mA; 800 to 1300 MHz; DC current; GaAs; L-band; MMIC; RF circuits; SAW locked oscillator; current leaks; enhancement mode FET channel; high-gain devices; high-impedance environments; low knee voltages; low power transmitter/receiver; substrate losses; variable-gain 180 degrees phase shifter; variable-gain power amplifier; Acoustic waves; Batteries; Gallium arsenide; MMICs; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Surface acoustic wave devices; Surface acoustic waves; Transmitters;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.186008
