Title :
A 1.2V-5V High Efficiency CMOS Charge Pump for Non-Volatile Memories
Author :
Richelli, Anna ; Mensi, Luca ; Colalongo, Luigi ; Kovács, Zsolt ; Rolandi, Pier Luigi
Author_Institution :
Dept. of Electron., Brescia Univ.
Abstract :
A new charge pump circuit is presented: it is based on PMOS pass transistors with dynamic control of the gate and body voltages. By controlling the gate and the bulk of each pass-transistor, the voltage loss due to the device threshold is removed and the charge is pumped from one stage to the other with negligible voltage drop. Compared to conventional charge pumps, it exhibits a larger output voltage and better power efficiency still retaining a simple two-phase clocking scheme. The architecture is based on low-voltage transistors and the voltage drop among the device terminals does not exceed the supply voltage. Measurements performed on a 4-stage charge pump, fabricated exploiting a ST 130nm CMOS process, are provided.
Keywords :
CMOS integrated circuits; MOSFET; random-access storage; voltage multipliers; 1.2 to 5 V; 130 nm; CMOS process; PMOS pass transistors; charge pump circuit; high efficiency CMOS charge pump; low-voltage transistors; nonvolatile memories; two-phase clocking scheme; Charge measurement; Charge pumps; Circuits; Clocks; Current measurement; Nonvolatile memory; Performance evaluation; Threshold voltage; Voltage control; Voltage measurement;
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
DOI :
10.1109/ISCAS.2007.377946
