DocumentCode
2900317
Title
Development of the S-band high power klystron with bandwidth of 12%
Author
Wang, Yong ; Zhang, Jian ; Wang, Ying ; Zhang, Zhi-qiang
Author_Institution
Key Lab. of High Power Microwave Sources & Technol., Chinese Acad. of Sci., Beijing, China
fYear
2011
fDate
21-24 Feb. 2011
Firstpage
33
Lastpage
34
Abstract
The development of broadband high power klystron has being done in the Institute of Electronics, Chinese Academy of Sciences (IECAS), and the breakthrough of the bandwidth of klystron has been obtained continuously. In S-band, after the achievement of 10% and 11% bandwidth, the relative instantaneous bandwidth of 12% has been brought to success in 2009. The paper introduces the design, simulation and test results of this klystron in detail.
Keywords
bandwidth allocation; klystrons; Chinese Academy of Sciences; IECAS; Institute of Electronics; S-band high power klystron; broadband high power klystron; klystron bandwidth; relative instantaneous bandwidth; Bandwidth; Broadband communication; Cavity resonators; Couplings; Klystrons; Radar; Lower peak power; S-band klystron; bandwidth of 12%;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference (IVEC), 2011 IEEE International
Conference_Location
Bangalore
Print_ISBN
978-1-4244-8662-5
Type
conf
DOI
10.1109/IVEC.2011.5746861
Filename
5746861
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