Title :
High performance HEMT MMICs for low cost EHF SATCOM terminals
Author :
Lester, J.A. ; Jones, W.L. ; Huang, P. ; Garske, D. ; Chow, P.D.
Author_Institution :
TRW Electronic Systems Group, Redondo Beach, CA, USA
Abstract :
A set of high-performance pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) monolithic microwave integrated circuits (MMICs) for insertion into a low-cost transceiver for EHF satellite communication terminal applications is presented. A 20-GHz MMIC low-noise amplifier (LNA) with a 2.8-dB noise figure and 38-dB gain and a 44-GHz driver amplifier with an output power of +17.8 dBm, 22.8-dB gain, and 17% efficiency are described. Also reported are HEMT MMIC doublers with output frequencies of 17, 22, and 44 GHz which demonstrated +13-, +12- and +5-dBm power output with 1-dB conversion loss, 1-dB conversion gain, and 4-dB conversion loss, respectively.<>
Keywords :
III-V semiconductors; MMIC; frequency multipliers; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; satellite links; transceivers; 1 dB; 17 GHz; 17 percent; 2.8 dB; 20 GHz; 22 GHz; 22.8 dB; 38 dB; 4 dB; 44 GHz; EHF SATCOM terminals; HEMT MMICs; InGaAs; doublers; low-noise amplifier; transceiver; Application specific integrated circuits; Costs; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Satellite communication; Transceivers;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.186012
