Title :
An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system
Author :
Miyashita, Makoto ; Maemura, K. ; Yamamoto, K. ; Shimura, T. ; Nogami, M. ; Motoshima, K. ; Kitayama, T. ; Mitsui, Y.
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Abstract :
An ultrabroadband GaAs MESFET preamplifier IC was developed for a 10-Gb/s optical communication system. A high transimpedance of 44 dB- Omega has been obtained from DC to 12 GHz. A receiver has also been fabricated by using this preamplifier IC and a photodiode. The receiver operated with an extremely low equivalent input noise current of 12.6 pA/ square root Hz from DC to 7.8 GHz. The circuit design and the high-frequency characteristics of the preamplifier IC and the receiver are described.<>
Keywords :
MMIC; Schottky gate field effect transistors; gallium arsenide; optical communication equipment; optical receivers; preamplifiers; wideband amplifiers; 0 to 12 GHz; 0 to 7.8 GHz; 10 Gbit/s; GaAs; MESFET preamplifier IC; equivalent input noise current; high-frequency characteristics; optical communication system; optical receivers; photodiode; ultrabroadband amplifiers; Gallium arsenide; Integrated circuit noise; MESFET integrated circuits; Optical fiber communication; Optical noise; Optical receivers; Photodiodes; Photonic integrated circuits; Preamplifiers; Ultraviolet sources;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.186016
