Comparison of dynamic fluctuation in drain current with static variability using N-MOSFETs with poly-Si/SiO2 gate stack structures

We have revealed that the dynamic fluctuation in time, i.e., noise, of drain current (I_d) is closely related to the static variability. The current conduction mechanism such as diffusion and drift transports is a key to consistently understand the magnitude of not only the noise from a single transistor but also the static variability obtained from a number of transistors. The magnitude of fluctuation in the diffusion regime is larger than that in the drift regime, where the large number of carriers reduces the fluctuation.