Title :
Comparison Of A Rapid Wafer Level Gate Oxide Test To Tddb
Author :
Barakji, Abdul-Rahman ; Yue, John T. ; Bui, Nguyen D. ; Toyoshiba, Len
Author_Institution :
Technology Reliability Engineering
Keywords :
Breakdown voltage; Capacitors; Dielectric breakdown; Electric breakdown; Equations; Histograms; Life estimation; Monitoring; Stress; Testing;
Conference_Titel :
Wafer Level Reliability Workshop, 1992. Final Report., 1992 International
Conference_Location :
Lake Tahoe, CA, USA
DOI :
10.1109/IWLR.1992.657996
