DocumentCode

2900538

Title

Comparison Of A Rapid Wafer Level Gate Oxide Test To Tddb

Author

Barakji, Abdul-Rahman ; Yue, John T. ; Bui, Nguyen D. ; Toyoshiba, Len

Author_Institution

Technology Reliability Engineering

fYear

1992

fDate

25-28 Oct. 1992

Firstpage

137

Lastpage

141

Keywords

Breakdown voltage; Capacitors; Dielectric breakdown; Electric breakdown; Equations; Histograms; Life estimation; Monitoring; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Wafer Level Reliability Workshop, 1992. Final Report., 1992 International

Conference_Location

Lake Tahoe, CA, USA

Type

conf

DOI

10.1109/IWLR.1992.657996

Filename

657996