Title :
A Ku band converter IC
Author :
Kaneko, T. ; Miya, T. ; Yoshida, S.
Author_Institution :
NEC Corp., Tokyo, Japan
Abstract :
A Ku-band voltage controlled oscillator (VCO) converter IC for direct-broadcast satellite (DBS) and communication satellite (CS) receivers was developed on a 1.2 mm*2.8-mm chip using a 0.5- mu m MESFET process. The IC included five functional blocks, i.e., prescaler, VCO, low-noise amplifier, mixer, and IF buffer. The downconverter IC makes it possible to simplify the RF circuits of the CS receivers by combining a two-stage high-electron-mobility-transistor (HEMT) amplifier and an IF amplifier. This converter IC achieved a phase noise for -80 dBc/Hz at 10-kHz offset from a 10.75 GHz phase locked carrier. A 0.5- mu m-gate-length wafer fabrication process was used for both the digital and analog blocks. The circuit design and wafer fabrication process are discussed, and experimental results are reported.<>
Keywords :
MMIC; Schottky gate field effect transistors; direct broadcasting by satellite; frequency convertors; high electron mobility transistors; microwave amplifiers; variable-frequency oscillators; 0.5 micron; 10.75 GHz; IF amplifier; IF buffer; Ku-band; MESFET process; VCO; communication satellite; converter IC; direct-broadcast satellite; high-electron-mobility-transistor; low-noise amplifier; mixer; phase noise; prescaler; voltage controlled oscillator; wafer fabrication process; Artificial satellites; Fabrication; HEMTs; Low-noise amplifiers; MESFET integrated circuits; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Satellite broadcasting; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.186025
