High resolution mask metrology in photo lithography: impact of rigorous effects

Author

Totzeck, M. ; Heil, Ted

Author_Institution

Carl Zeiss SMT AG, Oberkochen, Germany

fYear

2005

fDate

12-17 June 2005

Firstpage

449

Abstract

In lithography assessment of the mask performance and the printability of mask defects is an important issue. For that rigorous effects have to be included into the mask metrology. A measurement of the mask topography alone would yield significant errors. Furthermore, rigorous effects can be used for increased accuracy in high resolution optical metrology in general. Based on systematic simulations with MicroSim using the rigorous coupled wave analysis, we have developed a classification scheme of the mask induced polarization effects in optical lithography.

Keywords

light polarisation; masks; optical fabrication; photolithography; semiconductor technology; surface topography measurement; MicroSim; classification scheme; high resolution mask metrology; high resolution optical metrology; mask defect printability; mask induced polarization effects; mask performance; mask topography measurement; optical lithography; photo lithography; rigorous coupled wave analysis; rigorous effects impact; systematic simulations; Electromagnetic diffraction; Electromagnetic propagation; Geometrical optics; Lithography; Metrology; Optical diffraction; Optical polarization; Optical propagation; Optical refraction; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on

Print_ISBN

0-7803-8974-3

Type

conf

DOI

10.1109/CLEOE.2005.1568227

Filename

1568227