DocumentCode :
2900820
Title :
Correlation of acoustic emission, light fluctuations surface and three-dimensional distribution EL intensity in InGaN/GaN structures
Author :
Kisseluk, Maxim ; Vlasenko, Olexander ; Lyashenko, Oleg V.
Author_Institution :
V.E. Lashkaryov Inst. of Semicond. Phys., NAS of Ukraine, Kiev, Ukraine
fYear :
2011
fDate :
12-16 June 2011
Firstpage :
401
Lastpage :
404
Abstract :
It is shown that the probable mechanism of fluctuations of surface and three-dimensional EL intensity distribution of light-emitting heterostructure is occurrence and burning-off of local pipes in areas, which because of the nonuniform distribution of indium in InxGa1-xN solid solution and influences of dislocation system have greater conductance.
Keywords :
III-V semiconductors; acoustic emission; dislocations; electroluminescence; fluctuations; gallium compounds; indium compounds; light emitting diodes; solid solutions; wide band gap semiconductors; Acoustic Emission; InGaN-GaN; Light Fluctuations Surface; conductance; dislocation system; indium; light-emitting heterostructure; solid solution; three-dimensional distribution electroluminescence intensity; Degradation; Fluctuations; Gallium nitride; Indium; Light emitting diodes; Noise; Substrates; Acoustic Emission; Electroluminescence; LED; fluctuations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
Type :
conf
DOI :
10.1109/ICNF.2011.5994354
Filename :
5994354
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2900820
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