50GHz Double-Balanced Up-Conversion Mixer Using CMOS 90nm Process

Author

Lai, Ivan Chee Hong ; Kambayashi, Yuki ; Fujishima, Minoru

Author_Institution

Dept. of Frontier Informatics, Tokyo Univ., Kashiwa

fYear

2007

fDate

27-30 May 2007

Firstpage

2542

Lastpage

2545

Abstract

This paper reports the first millimeter-wave double-balanced up-conversion mixer that is realized using a standard CMOS 90nm process. The circuit integrates passive on-chip baluns for single-ended to differential-ended conversions at the high frequency LO and RF ports and an active balun at the IF port. The passive baluns use a stacked configuration and also provide impedance matching to improve conversion gain. The active balun employs the quasi-symmetric properties of the drain and the source of the MOSFET to provide a balanced output. The mixer has a measured 11dB conversion loss and a LO rejection of 26.5dB. The power consumption is 13.2mW.

Keywords

CMOS integrated circuits; MIMIC; baluns; impedance matching; millimetre wave mixers; 11 dB; 13.2 mW; 50 GHz; 90 nm; CMOS process; MIMIC mixer; MOSFET; impedance matching; millimeter-wave double-balanced up-conversion mixer; CMOS process; CMOS technology; Circuit topology; Frequency conversion; Impedance matching; MOSFET circuits; Millimeter wave radar; Millimeter wave technology; Mixers; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on

Conference_Location

New Orleans, LA

Print_ISBN

1-4244-0920-9

Electronic_ISBN

1-4244-0921-7

Type

conf

DOI

10.1109/ISCAS.2007.377833

Filename

4253195