Title :
Field emission and photo-enhanced field emission investigations of CdS nanowires array
Author :
Chavan, Padmakar G. ; Badadhe, Satish S. ; Mulla, Imtiaz S. ; More, Mahendra A. ; Joag, Dilip S.
Author_Institution :
Dept. of Phys., Univ. of Pune, Pune, India
Abstract :
The CdS nanowires array were grown by thermal evaporation technique on Au patterned silicon substrate. The SEM and TEM are used to analyze surface morphology as well as crystallinity of the as-synthesized CdS nanowires film. The field emission properties of CdS nanowires array were investigated in a parallel plate diode configuration. A high current density of ~ 68 μA/cm2 has been drawn at the applied electric field of ~ 5.2 V/μm. The field emission current-time stability measurements depict that the emission current is stable over the period of measurement (3h). The photo-enhanced field emission study shows the photo-switching behavior with rise in the current level to ~ 3μA for the preset value of ~ 1μA repetitively.
Keywords :
II-VI semiconductors; cadmium compounds; current density; field evaporation; nanowires; scanning electron microscopy; semiconductor diodes; semiconductor growth; semiconductor thin films; surface morphology; transmission electron microscopy; wide band gap semiconductors; Au-Si; CdS; CdS nanowire array; SEM; TEM; as-synthesized CdS nanowires film; emission current-time stability measurements; field emission property; high current density; parallel plate diode configuration; photo-enhanced field emission; photo-switching behavior; surface morphology; thermal evaporation technique; Arrays; Current measurement; Nanowires; Scanning electron microscopy; Semiconductor device measurement; Silicon; Substrates; field emission; photo-switching; thermal evaporation;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2011 IEEE International
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-8662-5
DOI :
10.1109/IVEC.2011.5746893
