On the turn-on field of carbon nanotube cathode

Author

Chung, Shen Shou Max

Author_Institution

Dept. of Electron. Eng., Southern Taiwan Univ., Yung-Kang, Taiwan

fYear

2011

fDate

21-24 Feb. 2011

Firstpage

101

Lastpage

102

Abstract

Carbon nanotube (CNT) cathode is considered a hopeful new cathode for various vacuum electronics devices, and the most important specifications are turn-on field and current density. One factor that affects turn-on field most is the Schottky barrier between CNT and the metal electrode in CNT cathode. We manage to reduce this barrier by using metal-CNT hot-bonding process and found the turn-on field improved to 1-2 V/μm. Current density is found related to microscopic shielding effect, and the heating results to shifting of emission sites, thus a lowered average current density and fluctuation in emission current.

Keywords

Schottky barriers; bonding processes; carbon nanotubes; cathodes; current density; nanotube devices; C; CNT cathode; Schottky barrier; carbon nanotube cathode; current density; metal electrode; metal-CNT hot-bonding process; microscopic shielding effect; turn-on field; vacuum electronic device; Carbon nanotubes; Cathodes; Current density; Equations; Heating; Metals; Schottky barriers; carbon nanotube; cathode; current density; field emission; turn-on field;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference (IVEC), 2011 IEEE International

Conference_Location

Bangalore

Print_ISBN

978-1-4244-8662-5

Type

conf

DOI

10.1109/IVEC.2011.5746895

Filename

5746895