Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur passivation

Author

Chen, Chun-Yuan ; Fu, Ssu-I ; Tsai, Ching-Hsiu ; Chang, Chi-Yuan ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., National Cheng-Kung Univ., Tainan, Taiwan

fYear

2004

fDate

6-10 Sept. 2004

Firstpage

242

Lastpage

244

Abstract

The temperature-dependent DC characteristic of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur passivation are studied and demonstrated. The device with sulfur treatment can be operated under extremely low collector current (I_C*cong;10^-11A) region, which offers the promise for low-power electronics applications. It is known that, from experimental results, the too long time for sulfur treatment is not necessary. In this work, 12 minutes of sulfur treatment is an appropriate choice. Furthermore, the studied devices with sulfur treatment can remarkably reduce the collector-emitter offset voltage ΔV_CE.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; sulphur; 720 s; GaAs; InGaP; InGaP-GaAs heterojunction bipolar transistors; S; collector-emitter offset voltage reduction; extremely low collector current; sulfur passivation; sulfur treatment; temperature-dependent DC characteristic; Bonding; Etching; Gallium arsenide; Heterojunction bipolar transistors; Passivation; Radiative recombination; Spontaneous emission; Surface treatment; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International

Print_ISBN

0-7803-8437-7

Type

conf

DOI

10.1109/IVESC.2004.1414218

Filename

1414218