Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur passivation

The temperature-dependent DC characteristic of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur passivation are studied and demonstrated. The device with sulfur treatment can be operated under extremely low collector current (I_C*cong;10^-11A) region, which offers the promise for low-power electronics applications. It is known that, from experimental results, the too long time for sulfur treatment is not necessary. In this work, 12 minutes of sulfur treatment is an appropriate choice. Furthermore, the studied devices with sulfur treatment can remarkably reduce the collector-emitter offset voltage ΔV_CE.