Characteristics of a double-barrier-emitter triangular-barrier optoelectronic switch

Author

Chen, Jing-Yuh ; Guo, Der-Feng ; Chen, Chun-Yuan ; Lai, Po-Hsien ; Tsai, Yan-Ying ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

fYear

2004

fDate

6-10 Sept. 2004

Firstpage

245

Lastpage

247

Abstract

In this study, a triangular-barrier and a double-barrier structure were integrated to form a bi-directional switching device. In the structure center of the triangular barrier, a delta-doped (δ-doped) quantum well was inserted to enhance the carrier accumulation. Owing to the resonant tunneling through the double barrier and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena would occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively.

Keywords

avalanche breakdown; carrier density; optoelectronic devices; quantum well devices; resonant tunnelling devices; semiconductor junctions; semiconductor switches; N-shaped negative-differential-resistance; S-shaped negative-differential-resistance; avalanche multiplication; bi-directional switching device; carrier accumulation enhancement; current-voltage characteristics; delta-doped quantum well; double-barrier-emitter; normal operation mode; optoelectronic switch; resonant tunneling; reverse operation mode; reverse-biased junction; triangular-barrier structure; Bidirectional control; Conductivity; Indium gallium arsenide; Lighting; Microelectronics; Microwave oscillators; Potential well; Resonant tunneling devices; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International

Print_ISBN

0-7803-8437-7

Type

conf

DOI

10.1109/IVESC.2004.1414219

Filename

1414219