Enhanced electron emission from diamond film deposited on pre-seeded Si substrate with nanosized diamond power [power read as powder]

Author

Gu, Changzhi

Author_Institution

Inst. of Phys., Chinese Acad. of Sci., Beijing, China

fYear

2004

fDate

6-10 Sept. 2004

Firstpage

248

Lastpage

250

Abstract

Diamond film was synthesized by microwave plasma chemical vapor deposition (MWPCVD) method. A three-step deposition process of diamond film was using on 4-inch pre-seeded mirror polished silicon wafer. Scanning electron microscopy (SEM), Raman spectroscopy and in-situ stress measured were employed to characterize the structure and property of diamond film. The electron emission from large area diamond film was described and compared with that from diamond film deposited on Si substrate scratched by diamond powder, the results suggested that low-field electron emission and high emission current can be obtained from the diamond film deposited on seeded substrate.

Keywords

Raman spectroscopy; diamond; electron emission; nanoparticles; plasma CVD; powders; scanning electron microscopy; silicon; thin films; vapour deposition; Raman spectroscopy; Si; diamond film; enhanced electron emission; high emission current; in-situ stress; low-field electron emission; microwave plasma chemical vapor deposition method; nanosized diamond power; pre-seeded Si substrate; pre-seeded mirror polished silicon wafer; scanning electron microscopy; three-step deposition process; Chemical vapor deposition; Electron emission; Microwave theory and techniques; Plasma chemistry; Plasma measurements; Plasma properties; Powders; Scanning electron microscopy; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International

Print_ISBN

0-7803-8437-7

Type

conf

DOI

10.1109/IVESC.2004.1414220

Filename

1414220