• DocumentCode
    2901359
  • Title

    Theoretical approach to the stoichiometric feature of field emission from AlxGa1-xN

  • Author

    Choi, Tai S. ; Chung, M.S.

  • Author_Institution
    Dept. of Phys., Ulsan Univ., South Korea
  • fYear
    2004
  • fDate
    6-10 Sept. 2004
  • Firstpage
    259
  • Lastpage
    261
  • Abstract
    The field emission current density j from the ternary alloy AlxGa1-xN is calculated as a function of a stoichiometric composition x for 0≤x≤1. In addition to the doping, the internal field emission is considered to contribute to the carrier concentration n of the conduction band of AlxGa1-xN. A full calculation is made to obtain the exact j from AlxGa1-xN as a function of x and the field F. Then we found the stoichiometric dependence of field emission from AlxGa1-xN by analyzing the effects of both the electron affinity and the carrier concentration.
  • Keywords
    III-V semiconductors; alloys; aluminium compounds; carrier density; current density; electron affinity; field emission; stoichiometry; AlxGa1-xN; AlGaN; carrier concentration; electron affinity; field emission current density; internal field emission; stoichiometric composition; stoichiometric dependence; stoichiometric feature; Aluminum alloys; Cathodes; Current density; Doping; Electron emission; Gallium alloys; Ionization; Moon; Physics; Schottky barriers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
  • Print_ISBN
    0-7803-8437-7
  • Type

    conf

  • DOI
    10.1109/IVESC.2004.1414225
  • Filename
    1414225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2901359