DocumentCode
2901528
Title
Low frequency noise in organic solar cells
Author
Katsu, Hideaki ; Kawasugi, Yoshitaka ; Yamada, Ryo ; Tada, Hirokazu
Author_Institution
Div. of Mater. Phys., Osaka Univ., Toyonaka, Japan
fYear
2011
fDate
12-16 June 2011
Firstpage
77
Lastpage
79
Abstract
The conduction mechanism in organic heterojunction solar cells (OHSCs) has been discussed based on the results of low frequency noise spectroscopy. We prepared OHSCs composed of poly-(2-methoxy-5-(3´,7´-dimethyloctyloxy)-1,4-phenylenevinylene), regioregular poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester. The devices prepared exhibited 1/f noise at the bias voltage range from +2 V (forward) to -2 V (reverse). It was found that there were three regimes in the noise spectral density Si(f) in the forward bias voltage region. In the ohmic regime, Si(f) increased in proportional to the square of current. In the trap filling regime, Si(f) was constant, while it increased again in the space charge limited current regime. In addition to this behavior, the noise spectra of OHSCs in the reverse bias voltage region exhibited the superposition of 1/f noise and the generation-recombination noise indicating the existence of carrier trap sites. These phenomena observed were thought to result from the breakdown and/or alleviation of the conduction path, which was caused by thermal stress of current flow.
Keywords
noise; semiconductor devices; solar cells; thermal stresses; OHSCs noise spectra; conduction mechanism; forward bias voltage region; generation recombination noise; low frequency noise; low frequency noise spectroscopy; noise spectral density; organic heterojunction solar cells; organic solar cell; thermal stress; Fluctuations; Low-frequency noise; Noise measurement; Photovoltaic cells; Semiconductor device measurement; Voltage measurement; 1/ƒ noise; low frequency noise; organic solar cell; power spectral density; variable range hopping conduction;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location
Toronto, ON
Print_ISBN
978-1-4577-0189-4
Type
conf
DOI
10.1109/ICNF.2011.5994389
Filename
5994389
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