A new filtering method to extract repeated defects (FIMER) [lithography]

Author

Imai, Kiyotaka ; Kaga, Toru

Author_Institution

Yield Manage. Consulting, KLA-Tencor Japan Ltd., Yokohama, Japan

fYear

1999

fDate

1999

Firstpage

22

Lastpage

25

Abstract

With the increase in importance of lithography processes in the sub-0.25 μm era, it is becoming critical to extract repeated defects resulting from mask-related defects or from the lithography margin. In this paper, a new filtering method to extract repeated defects (FIMER) is proposed. It is shown by simulation that FIMER is superior to the conventional windowing method in extracting the repeated defects. For the simulation studies taken up in this paper, the repeated defects are extracted by FIMER with error of less than 5%

Keywords

fault location; inspection; integrated circuit measurement; integrated circuit yield; lithography; masks; semiconductor process modelling; FIMER filtering method; filtering method to extract repeated defects; lithography; lithography margin; lithography processes; mask-related defect; repeated defect extraction; repeated defect extraction error; repeated defects; simulation; windowing method; Context modeling; Data mining; Electronic mail; Filtering; Lithography; Probes; Semiconductor device modeling; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 1999. IWSM. 1999 4th International Workshop on

Conference_Location

Kyoto

Print_ISBN

0-7803-5154-1

Type

conf

DOI

10.1109/IWSTM.1999.773187

Filename

773187