TCAD-prototyping with new accurate worst-case definition for a 0.2 micron CMOS-ASIC process

Author

Kunitomo, Hiroyasu ; Sat, Hisako ; Tsuneno, Katsumi ; Ikematsu, R. ; Masuda, Hiroo

Author_Institution

Hitachi ULSI Syst. Ltd., Tokyo, Japan

fYear

1999

fDate

1999

Firstpage

38

Lastpage

41

Abstract

An industrial statistical worst case modeling process for 0.2 μm CMOS is presented. It is based on new TCAD-prototyping with efficient correlation analysis for CMOS performance goals under process variability. Since the manufacturing process undergoes ongoing improvement, well-calibrated TCAD is primary tool to construct realistic performance corner models. A robust TCAD calibration method is one of the keys to achieving accurate prediction. Statistically least conservative “worst case” conditions are newly identified, which state that 99.7% of device performance is contained between the FF (fast fast) and SS (slow slow) worst corners. This reduces the design guardband by 10% compared with conventional worst case approaches

Keywords

CMOS integrated circuits; application specific integrated circuits; calibration; correlation methods; integrated circuit design; integrated circuit modelling; integrated circuit yield; rapid prototyping (industrial); semiconductor process modelling; statistical analysis; technology CAD (electronics); 0.2 micron; CMOS performance goals; CMOS-ASIC process; FF worst corners; SS worst corners; TCAD calibration method; TCAD-prototyping; calibrated TCAD; correlation analysis; design guardband; device performance; fast fast worst corners; industrial statistical worst case modeling process; manufacturing process; performance corner models; process variability; slow slow worst corners; statistically least conservative worst case conditions; worst case approaches; worst-case definition; CMOS process; Calibration; Circuits; Manufacturing processes; Performance analysis; Predictive models; Process design; Prototypes; Scattering; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 1999. IWSM. 1999 4th International Workshop on

Conference_Location

Kyoto

Print_ISBN

0-7803-5154-1

Type

conf

DOI

10.1109/IWSTM.1999.773191

Filename

773191